Crystal structure of voltage sensing domain of Ci-VSP with fragment antibody (R217E, 2.5 A)

Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

EVQLVESGGGLVQPGGSLRLSCAASGFNVSSSSIHWVRQAPGKGLEWVASISSYYGYTSYADSVKGRFTISADTSKNTAY
LQMNSLRAEDTAVYYCARSYSWSYAIDYWGQGTLVTVSSASTKGPSVFPLAPSSKSTSGGTAALGCLVKDYFPEPVTVSW
NSGALTSGVHTFPAVLQSSGLYSLSSVVTVPSSSLGTQTYICNVNHKPSNTKVDKKVEP

DIQMTQSPSSLSASVGDRVTITCRASQSVSSAVAWYQQKPGKAPKLLIYSASSLYSGVPSRFSGSGSGTDFTLTISSLQP
EDFATYYCQQYFYWPITFGQGTKVEIKRTVAAPSVFIFPPSDEQLKSGTASVVCLLNNFYPREAKVQWKVDNALQAGNSQ
ESVTEQDSKDSTYSLSSTLTLSKADYEKHKVYACEVTHQGLSSPVTKSFNR

MRGSHHHHHHGVDDGRMEIPTTGVGRVQFRVRAVIDHLGMRVFGVFLIFLDIILMIIDLSLPGKSESSQSFYDGMALALS
CYFMLDLGLRIFAYGPKNFFTNPWEVADGLIIVVTFVVTIFYTVLDEYVQETGADGLGELVVLARLLRVVRLARIFYSHQ
QMKASSRRTISQNKRRYRKDGFKLN

phagemid coding for both heavy chain and light chain of the fragment antibody

0.1 M SPG, 20% PEG 1500, 10% glycerol, pH 8.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K

fragment antibody heavy chain, fragment antibody light chain, Voltage-sensor containing phosphatase

membrane protein, alpha helix, fragment antibody, voltage sensing domain, sensing voltage

GVDDGRMEIPTTGVGRVQFRVRAVIDHLGMRVFGVFLIFLDIILMIIDLSLPGKSESSQSFYDGMALALSCYFMLDLGLR
IFAYGPKNFFTNPWEVADGLIIVVTFVVTIFYTVLDEYVQETGADGLGRLVVLARLLRVVRLARIFYSHQQMKASSRRTI
SQNKRRYRKDGF